cystech electronics corp. spec. no. : c107n8j issued date : 2017.04.10 revised date : age no. : 1/10 MTP4435N8J cystek product specification p-channel enhancement mode mosfet MTP4435N8J bv dss -30v i d @v gs =-10v, t c =25 c -10a i d @v gs =-10v, t a =25 c -6.8a r dson @v gs =-10v, i d =-10a 15.4m (typ.) r dson @v gs =-4.5v, i d =-7a 23.7m (typ.) features ? simple drive requirement ? low on-resistance ? fast switching speed ? pb-free lead plating and halogen-free package equivalent circuit outline MTP4435N8J g gate s source d drain 2928-8j pin 1 ordering information device package shipping MTP4435N8J-0-t1-g 2928-8j (pb-free lead plating and halogen-free package) 3000 pcs / tape & reel environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t1 : 3000 pcs / tape & reel,7? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c107n8j issued date : 2017.04.10 revised date : age no. : 2/10 MTP4435N8J cystek product specification absolute maximum ratings (t c =25 c, unless otherwise noted) parameter symbol limits unit drain-source breakdown voltage bv dss -30 gate-source voltage v gs 20 v t c =25 c, v gs =-10v -10 continuous drain current t c =70 c, v gs =-10v -8 t a =25 c, v gs =-10v -6.8 continuous drain current t a =70 c, v gs =-10v i d -5.4 pulsed drain current * 3 i dm -45 a t a =25 c 1.6 *2 t a =70 c p dsm 1.0 *2 t c =25 c 3.1 total power dissipation t c =70 c p d * 1 2.0 w operating junction and storage temp erature range tj ; tstg -55~+150 c thermal data parameter symbol value unit max. thermal resistance, junction-to-ambient, steady state r ja 80 *2 max. thermal resistance, junction-to-case r jc 40 c/w note : 1 . the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and is more useful in setting the upper di ssipation limit for cases where additional heatsinking is used. 2 . the value of r ja is measured with the device mounted on 1 in 2fr-4 board with 2 oz. copper, in a still air environment with t a =25 c. 216 c/w when mounted on a minimum pad of 2 oz. copper. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user?s specific board design. 3. pulse width limited by junction temperature t j(max) =150 c. ratings are based on low duty cycles to keep initial t j =25 c.
cystech electronics corp. spec. no. : c107n8j issued date : 2017.04.10 revised date : age no. : 3/10 MTP4435N8J cystek product specification electrical characteristics (tc=25c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -30 - - v gs =0v, i d =-250 a v gs(th) -1 - -2.5 v v ds =v gs , i d =-250 a i gss - - 100 na v gs =20v, v ds =0v - - -1 v ds =-30v, v gs =0v i dss - - -10 a v ds =-24v, v gs =0v, tj=70 c - 15.4 19 v gs =-10v, i d =-10a *r ds(on) - 23.7 32 m v gs =-4.5v, i d =-7a *g fs - 11 - s v ds =-10v, i d =-5a dynamic ciss - 1478 - coss - 176 - crss - 152 - pf v ds =-15v, v gs =0v, f=1mhz *td (on) - 10 - *tr - 17.2 - *td (off) - 61 - *tf - 13 - ns v ds =-15v, i d =-10a, v gs =-10v, r g =3 *qg - 33.3 50 *qgs - 4.7 - *qgd - 6.9 - nc v ds =-15v, i d =-10a, v gs =-10v rg - 6.6 - f=1mhz body diode *i s - - -4 *i sm - - -16 a *v sd - -0.75 -1 v v gs =0v, i s =-1a *trr - 12 - ns *qrr - 7 - nc i f =-10a, v gs =0v, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c107n8j issued date : 2017.04.10 revised date : age no. : 4/10 MTP4435N8J cystek product specification recommended soldering footprint unit : mm
cystech electronics corp. spec. no. : c107n8j issued date : 2017.04.10 revised date : age no. : 5/10 MTP4435N8J cystek product specification typical characteristics : typical output characteristics 0 5 10 15 20 25 30 35 40 45 50 012345 -v ds , drain-source voltage(v) -i d , drain current (a) -10v, -9v, -8v, -7v,-6v,-5v v gs =-2.5v -3.5v -4v -3 v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage i d =-250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 0.01 0.1 1 10 100 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =-4.5v v gs =-10v source drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0 2 4 6 8 101214161820 -i s , source drain current(a) -v sd , source-drain voltage(v) v gs =0v tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -75 -50 -25 0 25 50 75 100 125 150 175 200 tj, junction temperature(c) r ds(on) , normalized static drain-source on-state resistance v gs =-10v, i d =-10a r ds( on) @tj=25c : 15.4m typ. v gs =-4.5v, i d =-7a r ds( on) @tj=25c : 23.7m typ. -v gs , gate-source voltage(v) r ds(on) , static drain-source on-state resistance(m) i d =-10a i d =-7a
cystech electronics corp. spec. no. : c107n8j issued date : 2017.04.10 revised date : age no. : 6/10 MTP4435N8J cystek product specification typical characteristics(cont.) : capacitance vs drain-to-source voltage 100 1000 10000 0 5 10 15 20 25 30 -v ds , drain-source voltage(v) capacitance---(pf) c oss crss ciss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -v gs(th) , normalized threshold voltage i d =-250 a i d =-1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 -i d , drain current(a) g fs , forward transfer admittance(s) v ds =-10v pulsed t a =25c gate charge characteristics 0 2 4 6 8 10 0 4 8 12 16 20 24 28 32 36 qg, total gate charge(nc) -v gs , gate-source voltage(v) v ds =-15v i d =-10a maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 -i d , drain-source voltage(v) -i d , drain current(a) dc 10ms 100ms 100 s t a =25c, tj=150c, v gs =-10v r ja =80c/w, single pulse 1s 1ms r ds( on) limited maximum drain current vs junction temperature 0 1 2 3 4 5 6 7 8 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c, v gs =-10v r ja =80c/w
cystech electronics corp. spec. no. : c107n8j issued date : 2017.04.10 revised date : age no. : 7/10 MTP4435N8J cystek product specification typical characteristics(cont.) : q1( n-channel) typical transfer characteristics 0 5 10 15 20 25 30 35 40 45 50 012345 -v gs , gate-source voltage(v) -i d , drain current (a) v ds =-10v single pulse power rating, junction to ambient (note on page 2) 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c r ja =80c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =80c/w
cystech electronics corp. spec. no. : c107n8j issued date : 2017.04.10 revised date : age no. : 8/10 MTP4435N8J cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c107n8j issued date : 2017.04.10 revised date : age no. : 9/10 MTP4435N8J cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note :1. all temperatures refer to topside of the package, measured on the package body surface. 2.for devices mounted on fr-4 pcb of 1.6mm or equivalent grade pcb. if ot her grade pcb is used, care should be taken to match the coefficient s of thermal expansion between components and pcb. if they are not matched well, the solder joints may crac k or the bodies of the parts may cr ack or shatter as the assembly cools.
cystech electronics corp. spec. no. : c107n8j issued date : 2017.04.10 revised date : age no. : 10/10 MTP4435N8J cystek product specification 2928-8j dimension marking: 8-lead 2928-8j plastic package cystek package code: n8j date code s s s g d d d d 4435 millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.935 1.100 0.0368 0.0433 e1 2.300 2.500 0.0906 0.0984 a1 0.010 0.100 0.0004 0.0039 e2 2.650 3.050 0.1043 0.1201 a2 0.925 1.000 0.0364 0.0394 e 0.65 bsc 0.0256 bsc b 0.250 0.400 0.0098 0.0157 l 0.300 0.600 0.0118 0.0236 c 0.100 0.200 0.0039 0.0079 0 8 0 8 d 2.950 3.100 0.1161 0.1220 1 7 typ 7 typ e 2.500 3.000 0.0984 0.1181 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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